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dc.contributor.authorKanten, Bethany
dc.contributor.authorRiskey, Kory
dc.contributor.authorWheeler, Lance
dc.contributor.authorTaylor, P. Craig
dc.date2013-08
dc.date.accessioned2007-01-03T06:05:55Z
dc.date.accessioned2022-02-03T10:23:47Z
dc.date.available2007-01-03T06:05:55Z
dc.date.available2022-02-03T10:23:47Z
dc.identifier.urihttps://hdl.handle.net/11124/317
dc.identifier.urihttp://dx.doi.org/10.25676/11124/317
dc.description.abstractPerfectly crystalline silicon with a dopant provides free carriers in solar materials. The crystalline structure of the lattice provides an ideal semiconductor. Quantum dots have a better ability to collect electrical current than amorphous silicon. Defects in silicon are defined as places where the crystalline lattice is not perfect such as a dangling bond. Electron Spin Resonance can be used to understand defects and discover the defect concentration of various silicon structures to determine their potential efficiency. Phosphorus doped silicon quantum dots were synthesized using silane and phosphine gases by plasma enhanced chemical vapor deposition (PECVD). Samples were doped to increasing levels of phosphorus: 0.01%, 0.1%, 1%, 10%. Samples were prepared both dry and in toluene solvent. All samples characterized at three temperatures: 300K, 77K, 12K.
dc.description.sponsorshipNSF award numbers DMR-0820518 and DMR-1063150.
dc.format.mediumposters
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado School of Mines. Arthur Lakes Library
dc.relation.ispartof2013 NSF Research Experiences for Undergraduates posters and presentations
dc.rightsCopyright of the original work is retained by the author.
dc.subjectREMRSEC
dc.titleDefect analysis of phosphorus doped silicon quantum dots by electron spin resonance
dc.typeText
dc.typeStillImage


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