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dc.contributor.advisorTaylor, P. C. (Philip Craig), 1942-
dc.contributor.advisorO'Hayre, Ryan P.
dc.contributor.authorRiskey, Kory L.
dc.date.accessioned2007-01-03T04:53:52Z
dc.date.accessioned2022-02-09T08:48:21Z
dc.date.available2007-01-03T04:53:52Z
dc.date.available2022-02-09T08:48:21Z
dc.date.issued2013
dc.identifierT 7230
dc.identifier.urihttps://hdl.handle.net/11124/78768
dc.description2013 Spring.
dc.descriptionIncludes illustrations (some color).
dc.descriptionIncludes bibliographical references (pages 35-37).
dc.description.abstractTransistors are a fundamental building block of the integrated circuit. While standard transistors are based on electron (n-type) or hole (p-type) majority carrier modulation, a new type of transistor known as the ionic field-effect transistor (IFET) has recently been developed that modulates ionic current through an ion-conducting channel when a voltage is applied to a gating electrode. In this thesis work, standard lithography and etching techniques are used to develop the first ever solid-state IC compatible IFET device. Using this approach, large scale arrays of multiple transistor geometries are simultaneously realized for the first time on a single silicon wafer. The active channel layer for the devices is made from the proton-conducting material Nafion[RTM], and the contacts are a proton-transparent Pd/Ag alloy. The elegant design of this state-of-the-art ionic transistor allows it to operate in conditions unsuitable for standard microelectronics, such as aqueous environments. The design also provides an excellent test structure to characterize ionic thin films. As a unique feature, the transistors exhibit an ambipolar response, exhibiting either n-type or p-type behavior, depending on the polarity of the applied gate voltage.
dc.format.mediumborn digital
dc.format.mediummasters theses
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado School of Mines. Arthur Lakes Library
dc.relation.ispartof2013 - Mines Theses & Dissertations
dc.rightsCopyright of the original work is retained by the author.
dc.subjecttransistor
dc.subjectnanotechnology
dc.subjectnanoionics
dc.subjectNafion
dc.subjectmicroelectronics
dc.subjectionic
dc.subject.lcshTransistors
dc.subject.lcshMicroelectronics
dc.subject.lcshIons
dc.subject.lcshNanotechnology
dc.titleFabrication and characterization of a solid-state ambipolar ionic field-effect transistor
dc.typeText
dc.contributor.committeememberGorman, Brian P.
dc.contributor.committeememberLusk, Mark T.
thesis.degree.nameMaster of Science (M.S.)
thesis.degree.levelMasters
thesis.degree.disciplineMetallurgical and Materials Engineering
thesis.degree.grantorColorado School of Mines


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