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dc.contributor.advisorGorman, Brian P.
dc.contributor.authorGuthrey, Harvey L.
dc.date.accessioned2007-01-03T04:51:37Z
dc.date.accessioned2022-02-09T08:40:44Z
dc.date.available2007-01-03T04:51:37Z
dc.date.available2022-02-09T08:40:44Z
dc.date.issued2013
dc.identifierT 7205
dc.identifier.urihttps://hdl.handle.net/11124/78713
dc.description2013 Spring.
dc.descriptionIncludes illustrations (some color).
dc.descriptionIncludes bibliographical references.
dc.description.abstractMulticrystalline silicon (mc-Si) is the most used absorber in photovoltaic (PV) cells at present. If efficiencies are to improve in this established technology a better understanding of how minority carrier lifetimes are reduced is necessary. The capture of minority carriers by states associated with extended defects is known to play a major role in reducing minority carrier lifetimes. Energy levels introduced into the silicon bandgap often have electrical activity or optical signatures that can provide clues as to the structural or chemical origin of a particular level. This work utilizes electron beam induced current (EBIC), cathodoluminescence (CL) imaging and spectroscopy, photoluminescence (PL) imaging, and nano-scale chemical analysis to provide new insight into the origin of the electrical and optical properties of extended defects in mc-Si wafers and PV cells. A new interpretation of the temperature dependence of EBIC contrast is formulated based on observations of an anomalous form of the contrast vs. temperature curves as well as evidence of high impurity content. In addition an attempt is made to determine the origin of specific types of defect related emission as well as how this emission is influenced by processing steps applied to mc-Si wafers. Nano-scale chemical analysis is used to reveal the origin of the observed luminescence.
dc.format.mediumborn digital
dc.format.mediumdoctoral dissertations
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado School of Mines. Arthur Lakes Library
dc.relation.ispartof2013 - Mines Theses & Dissertations
dc.rightsCopyright of the original work is retained by the author.
dc.subjectsolar cell
dc.subjectsilicon photovoltaics
dc.subjectextended defects
dc.subjectcharacterization
dc.subject.lcshSilicon
dc.subject.lcshPhotovoltaic cells
dc.subject.lcshLuminescence
dc.subject.lcshElectron beams
dc.titleNano-scale origins of recombination activity and optical properties of extended defects in mc-Si wafers and PV cells
dc.typeText
dc.contributor.committeememberAl-Jassim, Mowafak
dc.contributor.committeememberWood, David M.
dc.contributor.committeememberAhrenkiel, Richard K.
dc.contributor.committeememberJohnston, Steve
thesis.degree.nameDoctor of Philosophy (Ph.D.)
thesis.degree.levelDoctoral
thesis.degree.disciplineMetallurgical and Materials Engineering
thesis.degree.grantorColorado School of Mines


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