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dc.contributor.authorGuthrey, Harvey
dc.contributor.authorMoutinho, Helio
dc.contributor.authorAl-Jassim, Mowafak
dc.contributor.authorGorman, Brian P.
dc.date2010
dc.date.accessioned2007-01-03T08:20:41Z
dc.date.accessioned2022-02-03T10:21:25Z
dc.date.available2007-01-03T08:20:41Z
dc.date.available2022-02-03T10:21:25Z
dc.identifier.urihttps://hdl.handle.net/11124/70625
dc.identifier.urihttp://dx.doi.org/10.25676/11124/70625
dc.description.abstractThe use of the electron backscattered diffraction (EBSD) technique to create maps of polycrystalline materials is generally limited to areas less than a square millimeter. In order to map larger areas, steps must be taken to address issues such as specimen preparation of large surface areas and orientation of these large specimens so they can be mounted appropriately in the microscope. Issues related to scanning areas larger than the SEM field of view and incorporating the results of these individual scans in to a final map are also still challenges. In this work we present the procedure and results for EBSD mapping of a polycrystalline silicon wafer with an area of 156 X 156 mm2. Techniques for field stitching, choosing pixel densities, and potential hardware modifications for EBSD mapping of large samples will be discussed.
dc.format.mediumposters
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado School of Mines. Arthur Lakes Library
dc.relationcog:359
dc.relation.ispartof2010 Research Fair poster sessions
dc.relation.ispartofGraduate Student Association
dc.rightsThe authors retain all rights associated with this work.
dc.titleTechnique for large-scale EBSD mapping of polycrystalline silicon
dc.typeStillImage


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