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dc.contributor.authorYohe, Benjamin
dc.contributor.authorCrawford, Nathan
dc.contributor.authorLiberatore, Matthew W.
dc.contributor.authorWilliams, S. Kim R.
dc.date2011-08
dc.date.accessioned2007-01-03T06:13:02Z
dc.date.accessioned2022-02-03T10:23:11Z
dc.date.available2007-01-03T06:13:02Z
dc.date.available2022-02-03T10:23:11Z
dc.identifier.urihttps://hdl.handle.net/11124/390
dc.identifier.urihttp://dx.doi.org/10.25676/11124/390
dc.description.abstractChemical mechanical polishing (CMP) planarizes and polishes semiconducting materials commonly used in microelectronics. The CMP process depends highly on the slurry composition, particle size and concentration, pH, and added chemicals, which determine the slurry's stability and effectiveness. During the CMP process, the slurry film thickness (between the polishing pad and wafer surface) can vary. It is hypothesized that particles agglomerate during the polishing process, leading to structural damages on the wafer surface (i.e., scratches, gouges, pits, etc.), which costs the semiconductor industry billions of dollars.
dc.description.sponsorshipNSF award numbers CBET-0968042 and DMR-0820518.
dc.format.mediumposters
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado School of Mines. Arthur Lakes Library
dc.relation.ispartof2011 NSF Research Experiences for Undergraduates posters and presentations
dc.rightsCopyright of the original work is retained by the author.
dc.subjectREMRSEC
dc.titleAltering shear thickening of chemical mechanical polishing slurries through the addition of electrolytes and organic solvents
dc.typeText
dc.typeStillImage


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