Raman spectroscopy of silicon quantum dots

dc.contributor.author	Kurchin, Rachel
dc.contributor.author	Kendrick, Chito
dc.contributor.author	Collins, Reuben T.
dc.contributor.author	Furtak, Thomas E.
dc.date	2012-08
dc.date.accessioned	2007-01-03T06:12:00Z
dc.date.accessioned	2022-02-03T10:23:25Z
dc.date.available	2007-01-03T06:12:00Z
dc.date.available	2022-02-03T10:23:25Z
dc.identifier.uri	https://hdl.handle.net/11124/380
dc.identifier.uri	http://dx.doi.org/10.25676/11124/380
dc.description.abstract	Silicon quantum dots are synthesized and studied extensively by REMRSEC, but they have not thus far had a fast and reliable way to characterize them. In this work, Raman spectroscopy is employed to study dots in varying types of samples, with special attention paid to the effects excessive laser power density can have on amorphous silicon.
dc.description.sponsorship	NSF award numbers DMR-1063150 and DMR-0907409.
dc.format.medium	posters
dc.language	English
dc.language.iso	eng
dc.publisher	Colorado School of Mines. Arthur Lakes Library
dc.relation.ispartof	2012 NSF Research Experiences for Undergraduates posters and presentations
dc.rights	Copyright of the original work is retained by the author.
dc.subject	REMRSEC
dc.title	Raman spectroscopy of silicon quantum dots
dc.type	Text
dc.type	StillImage

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Raman spectroscopy of silicon ...