Modelling thin-film transistors for understanding material properties and improving electronic device performance

Abstract

As new materials continue to develop through theoretical and experimental findings, it is desirable to have a reliable method of testing the materials to better understand their unique properties. Reliable computer modelling of electronic devices composed of these materials provides an inexpensive means of determining how a material will perform. Here we demonstrate the use of a computer software to accurately model electronic devices. We focus on amorphous silicon thin-film transistors and relate what is observed computationally to published experimental and theoretical results. We show that the computer models can be used to accurately study materials for applications in advanced electronic devices. We then discuss opportunities in new materials discovery that this type of modelling might permit.