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    Explanation of red spectral shifts at CdTe grain boundaries

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    Explanation of red spectral ...
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    Author
    Moseley, John
    Advisor
    Ahrenkiel, Richard K.
    Date issued
    2014
    Date submitted
    2014
    Keywords
    Cadmium telluride
    Thin films
    Solar cells
    Grain boundaries
    Crystallography
    
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    URI
    http://hdl.handle.net/11124/17014
    Abstract
    The best research-cell efficiencies for CdTe thin-film solar cells have recently increased from 17.3% to 20.4%. Despite these impressive recent gains, many improvements in device technology are necessary to reach the detailed-balance efficiency limit for CdTe-based (single-junction, non-concentrator) solar cells of ~32%. Improvements will increasingly rely on knowledge of the fundamental relationships between processing, electrical properties of defects, and device performance. In this study, scanning electron microscope (SEM)-based cathodoluminescence (CL) spectrum imaging was used to examine these fundamental relationships. In CL spectrum imaging we collect a spectrum per pixel in a 256 × 256 pixel SEM image by synchronizing a cryogenic silicon charge-coupled device with the electron-beam positioning. High spatial resolution photon energy maps obtained with this technique can reveal intricate luminescence phenomena that are not apparent in spectroscopic data. CL spectrum imaging was performed at T= 25 K on the back surface of CSS-deposited CdTe thin-films in a CdTe/CdS/SnO_2/glass configuration without back contacting. Both as-deposited and CdCl_2 vapor-treated samples were analyzed. Luminescence emission is detected (bands) at ~1.32 eV and ~1.50 eV, which are consistent with Z- and Y-bands. The importance of the Z-band to CdTe solar cells is discussed. For the grains in the as-deposited films, there is a significant redshift in the transition energies near the grain boundaries. For the Z-band, this behavior is due to the effect of the high GB recombination velocity (s_X~1x10^4 cm/s) in as-deposited CSS films on the donor-acceptor pair transition mechanism. The concentration of the shallow donor species participating in the Z-band transition was estimated to be ~1017 cm-3. Based on this estimate, and the spatial correlation between the Z-band and the A-center (V_Cd-Cl_Te) complex transitions, Cl_Te is proposed as is the shallow donor species.
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