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Extraction and simulation of nonlinear microwave devices using the finite-difference time domain method

Kast, Joshua Michael
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Advisor
Elsherbeni, Atef Z.
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Date
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2022
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2022 - Mines Theses & Dissertations
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URI
https://hdl.handle.net/11124/176713
Embargo Expires
2024-04-22
Abstract
Computer simulation of electromagnetic behavior is a key step in the design cycle of many electronic devices, including microwave communications components and high-speed digital devices. One widely-used simulation technique is the finite-difference time-domain (FDTD) method, wherein Maxwell’s equations are simulated in the time domain within a three-dimensional grid. A complicating factor for electromagnetic simulation is the incorporation of nonlinear components such as diodes and transistors. These components require specialized models, which add complexity to the simulation software. Versatile models, such as the X-Parameters, are attractive because a single nonlinear model can encapsulate any number of nonlinear devices simply by changing the model parameters. In this work, methods for incorporating the X-Parameters with FDTD simulation are developed. The X-Parameters model captures nonlinear behavior in the form of harmonic interactions. A method for extracting X-Parameter information by post-processing recorded data from an FDTD simulation is described. This method is tested on a nonlinear diode, and results compared to those from a commercial simulation package with an internal X-Parameters implementation. The X-Parameter model was additionally incorporated into FDTD simulation by means of a “black-box” updating formulation, which allows an FDTD grid cell to encapsulate the behavior of a circuit component with known X-Parameters. This X-Parameter black-box was tested for a bipolar-junction transistor, and results compared to established simulation approaches in FDTD. This novel approach is a versatile means for incorporating nonlinear devices into the FDTD simulation method.
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