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Mesoscale modeling of quantum yield in nanocrystalline devices
Irvin, Samantha Flammer, Philip David Lusk, Mark Beach, Joe van de Lagemaat, Jao Graf, Peter
Irvin, Samantha
Flammer, Philip David
Lusk, Mark
Beach, Joe
van de Lagemaat, Jao
Graf, Peter
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2010-08
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Abstract
A new solar material features silicon nanocrystals (nc-Si) within an amorphous silicon (a-Si) matrix. The efficiency with which photons are absorbed and converted to electric current depends on the size, orientation, volume fraction, and interface properties of nc-Si. This investigation has resulted in the development of a device level simulator which predicts quantum efficiency and voltage-current character for nc-Si/a-Si systems. These performance measures are calculated as functions of input photon energy. A number of different interactions were combined to completely characterize the device, including optical scattering and absorption, creation of excitons and charge carriers, electrostatic fields, and drift/diffusion of charge carriers.
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