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Photoluminescence quenching and hot carrier transfer in nanocrystalline silicon

Miller, Levi
; 
Fields, Jeremy
; 
Collins, Reuben T.
; 
Taylor, P. Craig
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2011-08
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REMRSEC
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2011 NSF Research Experiences for Undergraduates posters and presentations
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Photoluminescence quenching and hot carrier transfer in nanocrystalline silicon
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https://hdl.handle.net/11124/406
 http://dx.doi.org/10.25676/11124/406
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Abstract
The maximum efficiency of silicon photovoltaic cell is not 31% but 74%. Collecting hot carriers before they thermalize is a means to achieve this. In this regard, amorphous semiconductors are potentially useful materials. Nanocrystalline silicon (nc-Si:H) is unique in that carriers of wide energy distribution generated in amorphous regions may be in range of crystalline regions. These carriers can benefit from higher mobility and a lesser probability of thermalization. The motivation behind this project is to determine whether hot-carrier transfer occurs in thin-film nc-Si:H, and thus provide a potential material for hot carrier collection.
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